ON EMH2408-TL-H

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)20V4A45 мОм @ 4 А, 4,5 В

Overview

The EMH2407-TL-H is MOSFET 2N-CH 20V 6A EMH8, that includes EMH2407 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SMD, Flat Lead, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Supplier Device Package is 8-EMH, the device is offered in 2 N-Channel (Dual) FET Type, the device has a 1.4W of Power Max, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 580pF @ 10V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 6A, and Rds On Max Id Vgs is 25 mOhm @ 3A, 4.5V, and the Gate Charge Qg Vgs is 6.3nC @ 4.5V, and Id Continuous Drain Current is 6 A, and the Vds Drain Source Breakdown Voltage is 20 V, and Rds On Drain Source Resistance is 25 mOhms, and the Transistor Polarity is N-Channel.

EMH2407R-TL-H with EDA / CAD Models manufactured by SANYO. The EMH2407R-TL-H is available in EMH8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
4A Current - Continuous Drain (Id) @ 25°C
45mOhm @ 4A, 4.5V Rds On (Max) @ Id, Vgs
4.7nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
345pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
1.2W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type