ON EMH2411R-TL-H

MOSFET (оксид металла)Затвор логического уровня, преобразователь 2,5 В2 N-канальный (сдвоенный) общий сток30V5A36,5 мОм @ 2,5 А, 4,5 В

Overview

The EMH2408-TL-H is MOSFET 2N-CH 20V 4A EMH8, that includes EMH2408 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SMD, Flat Lead, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in 8-EMH Supplier Device Package, the device has a Dual of Configuration, and FET Type is 2 N-Channel (Dual), and the Power Max is 1.2W, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 345pF @ 10V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 4A, and the Rds On Max Id Vgs is 45 mOhm @ 4A, 4.5V, and Gate Charge Qg Vgs is 4.7nC @ 4.5V, and the Id Continuous Drain Current is 4 A, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 45 mOhms, and Transistor Polarity is N-Channel.

The EMH2409-TL-H is MOSFET 2N-CH 30V 4A EMH8, that includes 4A Current Continuous Drain Id 25°C, they are designed to operate with a 30V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 4.4nC @ 10V, as well as the 240pF @ 10V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of 150°C (TJ), the device is offered in 8-SMD, Flat Lead Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 1.2W, and the Rds On Max Id Vgs is 59 mOhm @ 2A, 10V, and Supplier Device Package is 8-EMH.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate, 2.5V Drive FET Feature
30V Drain to Source Voltage (Vdss)
5A Current - Continuous Drain (Id) @ 25°C
36.5mOhm @ 2.5A, 4.5V Rds On (Max) @ Id, Vgs
5.9nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1.4W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type