ON EMH2417R-TL-H

MOSFET (оксид металла)Затвор логического уровня, преобразователь 2,5 В2 N-канальный (сдвоенный) общий сток12V11A10 мОм @ 5 А, 4,5 В1,3 В @ 1 мА

Overview

The EMH2411R-TL-H is MOSFET 2N-CH 30V 5A EMH8, that includes EMH2411R Series, they are designed to operate with a Tape & Reel (TR) Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SMD, Flat Lead, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Supplier Device Package is 8-EMH, the device is offered in 2 N-Channel (Dual) Common Drain FET Type, the device has a 1.4W of Power Max, and Drain to Source Voltage Vdss is 30V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 5A, and the Rds On Max Id Vgs is 36.5 mOhm @ 2.5A, 4.5V, and Gate Charge Qg Vgs is 5.9nC @ 4.5V, and the Pd Power Dissipation is 1.4 W, and Id Continuous Drain Current is 5 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 36.5 mOhms, and the Transistor Polarity is N-Channel.

The EMH2412-TL-H is MOSFET 2N-CH 24V 6A EMH8, that includes 6A Current Continuous Drain Id 25°C, they are designed to operate with a 24V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 6.3nC @ 4.5V, as well as the Surface Mount Mounting Type, it has an Operating Temperature range of 150°C (TJ). In addition, the Package Case is 8-SMD, Flat Lead, the device is offered in Tape & Reel (TR) Packaging, the device has a 1.4W of Power Max, and Rds On Max Id Vgs is 27 mOhm @ 3A, 4.5V, and the Supplier Device Package is 8-EMH.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate, 2.5V Drive FET Feature
12V Drain to Source Voltage (Vdss)
11A Current - Continuous Drain (Id) @ 25°C
10mOhm @ 5A, 4.5V Rds On (Max) @ Id, Vgs
1.3V @ 1mA Vgs(th) (Max) @ Id
16nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1.3W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type