ON FDB3652

N-канальный100 V9A (Ta), 61A (Tc)4 В @ 250 мкА150 Вт (Тс)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The FDB3632 is MOSFET N-CH 100V 80A D2PAK, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a FDB3632_NL, that offers Unit Weight features such as 0.046296 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is D2PAK, and the Configuration is Single, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 310W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 100V, and Input Capacitance Ciss Vds is 6000pF @ 25V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 12A (Ta), 80A (Tc), and the Rds On Max Id Vgs is 9 mOhm @ 80A, 10V, and Vgs th Max Id is 4V @ 250μA, and the Gate Charge Qg Vgs is 110nC @ 10V, and Pd Power Dissipation is 310 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 46 ns, and Rise Time is 39 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 80 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Rds On Drain Source Resistance is 7.5 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 96 ns, and the Typical Turn On Delay Time is 30 ns, and Channel Mode is Enhancement.

The FDB3502 is MOSFET 75V N-Channel PowerTrench, that includes Enhancement Channel Mode, they are designed to operate with a Single Configuration, Fall Time is shown on datasheet note for use in a 3 ns, that offers Id Continuous Drain Current features such as 6 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device can also be used as SMD/SMT Mounting Style. In addition, the Number of Channels is 1 Channel, the device is offered in TO-252-3 Package Case, the device has a Reel of Packaging, and Pd Power Dissipation is 3.1 W, and the Rds On Drain Source Resistance is 47 mOhms, and Rise Time is 3 ns, and the Technology is Si, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Typical Turn Off Delay Time is 13 ns, and the Typical Turn On Delay Time is 9 ns, and Unit Weight is 0.046296 oz, and the Vds Drain Source Breakdown Voltage is 75 V, and Vgs Gate Source Voltage is 20 V.

Features

PowerTrench® Series
Cut Tape (CT) Package
MOSFET (Metal Oxide) Technology
100 V Drain to Source Voltage (Vdss)
9A (Ta), 61A (Tc) Current - Continuous Drain (Id) @ 25°C
6V, 10V Drive Voltage (Max Rds On, Min Rds On)
16mOhm @ 61A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
53 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
2880 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
150W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type