ON FDC3535

P-канал80 V2,1A (Ta)3 В @ 250 мкА1,6 Вт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

Features

Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A

Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A

High-performance trench technology for extremely low rDS(on)

High power and current handling capability in a widely used surface mount package

Fast switching speed

100% UIL Tested

RoHS Compliant

Applications

IGBTs and MOSFETs

Inductors

Bridge Configurations

Synchronous Rectifiers

AC Motor Speed Control

Switched Reluctance Motor Drivers

High-side P-Channel Devices

Dual Forward Converters

Current Control