ON FDC6036P_F077

MOSFET (оксид металла)Затвор логического уровня2 P-канала (сдвоенные)20V5A44 мОм @ 5 А, 4,5 В1,5 В @ 250 мкА

Overview

The FDC602P is MOSFET P-CH 20V 5.5A SSOT-6, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a FDC602P_NL, that offers Unit Weight features such as 0.001270 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOT-23-6 Thin, TSOT-23-6 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is SuperSOT?-6, and the Configuration is Single Quad Drain, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 800mW, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 1456pF @ 10V, and the FET Feature is Logic Level Gate, 2.5V Drive, and Current Continuous Drain Id 25°C is 5.5A (Ta), and the Rds On Max Id Vgs is 35 mOhm @ 5.5A, 4.5V, and Vgs th Max Id is 1.5V @ 250μA, and the Gate Charge Qg Vgs is 20nC @ 4.5V, and Pd Power Dissipation is 1.6 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 11 ns, and Rise Time is 11 ns, and the Vgs Gate Source Voltage is 12 V, and Id Continuous Drain Current is 5.5 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Rds On Drain Source Resistance is 35 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 57 ns, and the Typical Turn On Delay Time is 15 ns, and Forward Transconductance Min is 19 S, and the Channel Mode is Enhancement.

FDC602P-NL with circuit diagram manufactured by FAIRCHILD. The FDC602P-NL is available in SOT163 Package, is part of the IC Chips.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
5A Current - Continuous Drain (Id) @ 25°C
44mOhm @ 5A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
14nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
992pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
900mW Power - Max
Surface Mount Mounting Type