ON FDC6303N

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)25V680 мА450 мОм @ 500 мА, 4,5 В1,5 В @ 250 мкА

Overview

These dual N-Channel logic level enhancement mode  field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.Thisdevice has been designed especially for low voltage applications as a replacement for digital transistors in load switchingapplications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

Features

25 V, 0.68 A continuous, 2 A Peak

RDS(ON) = 0.6 |? @ VGS = 2.7 V

RDS(ON) = 0.45 |? @ VGS= 4.5 V

Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V

Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET

Applications

This product is general usage and suitable for many different applications.