ON FDC6306P

MOSFET (оксид металла)Затвор логического уровня2 P-канала (сдвоенные)20V1.9A170 мОм @ 1,9 А, 4,5 В1,5 В @ 250 мкА

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

-1.9 A, -20 V

RDS(on) = 0.170 |? @ VGS = -4.5 V

RDS(on) = 0.250 |? @ VGS = -2.5 V

Low gate charge (2.3nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

SuperSOT?-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Applications

This product is general usage and suitable for many different applications.