ON FDD3682

N-канальный100 V5,5A (Ta), 32A (Tc)4 В @ 250 мкА95 Вт (Тс)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The FDD3680 is MOSFET N-CH 100V 25A D-PAK, that includes PowerTrench Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a FDD3680_NL, that offers Unit Weight features such as 0.009184 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-252-3 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 68 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 21 ns, and Rise Time is 8.5 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 25 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 32 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 63 ns, and Typical Turn On Delay Time is 14 ns, and the Qg Gate Charge is 53 nC, and Forward Transconductance Min is 25 S, and the Channel Mode is Enhancement.

FDD3672_F085 with circuit diagram, that includes 44 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, that offers Mounting Style features such as SMD/SMT, Number of Channels is designed to work in 1 Channel, as well as the TO-252-3 Package Case, the device can also be used as Reel Packaging. In addition, the Pd Power Dissipation is 144 W, the device is offered in 24 mOhms Rds On Drain Source Resistance, the device has a Si of Technology, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Unit Weight is 0.009184 oz, and the Vds Drain Source Breakdown Voltage is 100 V.

Features

rDS(ON) = 32m2(Typ.).VGS = 10V, lD = 32A

- Qg(ltot) = 18.5nC(Typ.). VGS = 10v

- Low Miller Charge

Low ORR Body Diode

UIS Capability (Single Pulse and Repetitive Pulse)- Qualified to AEC Q101

Formerly developmental type 82755

Applications

- Dc/DC converters and Off-Line UPS

Distributed Power Architectures and VRMs

Primary Swilch for 24v and 48v Systems

High Voltage Synchronous Rectifier

Direct Injection / Diesel lnjection System

42V Automotive Load Control

Electronic Valve Train System