ON FDFMA3N109

N-канальный30 V2.9A (Tc)1,5 В @ 250 мкА1,5 Вт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Features

• 2.9 A, 30 V

• RDS(ON) = 123 mΩ @ VGS = 4.5 V

• RDS(ON) = 140 mΩ @ VGS = 3.0 V

• RDS(ON) = 163 mΩ @ VGS = 2.5

• VF < 0.46 V @ 500mA

• Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm

• HBM ESD protection level = 1.8kV typical (Note 3)

• RoHS Compliant

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial