ON FDFS2P753Z

P-канал30 V3A (Ta)3 В @ 250 мкА1,6 Вт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The FDFS2P106A is MOSFET P-CH 60V 3A 8-SOIC, that includes Reel Packaging, they are designed to operate with a FDFS2P106A_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOIC-Narrow-8, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single with Schottky Diode, the device is offered in 1 P-Channel Transistor Type, the device has a 2 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8.5 ns, and the Rise Time is 11 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is - 3 A, and Vds Drain Source Breakdown Voltage is - 60 V, and the Rds On Drain Source Resistance is 110 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 28 ns, and Typical Turn On Delay Time is 8 ns, and the Forward Transconductance Min is 8 S, and Channel Mode is Enhancement.

The FDFS2P103A is MOSFET P-CH 30V 5.3A 8-SOIC manufactured by FAIRCHILD. The FDFS2P103A is available in 8-SOIC (0.154", 3.90mm Width) Package, is part of the FETs - Single, , and with support for MOSFET P-CH 30V 5.3A 8-SOIC, P-Channel 30V 5.3A (Ta) 900mW (Ta) Surface Mount 8-SOIC, Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R.

Features

• Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A

• Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A

• VF < 500mV @ 1A

• VF < 580mV @ 2A

• Schottky and MOSFET incorporated into single power surface mount S0-8 package

• Electrically independent Schottky and MOSFET pinout for design flexibility

Applications

• cellular phones 

• laptop computers

• photovoltaic systems 

• wind turbines

• shunt voltage regulator and the series voltage regulator