ON FDMC3300NZA

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)20V8A26 мОм @ 8 А, 4,5 В1,5 В @ 250 мкА

Overview

The FDMC2674 is MOSFET N-CH 220V 1A 3.3SQ MLP, that includes UniFET? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.007408 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-PowerVDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a 8-MLP (3.3x3.3) of Supplier Device Package, and Configuration is Single Quad Drain Triple Source, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 2.1W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 220V, and the Input Capacitance Ciss Vds is 1180pF @ 100V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 1A (Ta), 7A (Tc), and Rds On Max Id Vgs is 366 mOhm @ 1A, 10V, and the Vgs th Max Id is 4V @ 250μA, and Gate Charge Qg Vgs is 18nC @ 10V, and the Pd Power Dissipation is 2.1 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 21 ns, and the Rise Time is 13 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 7 A, and Vds Drain Source Breakdown Voltage is 220 V, and the Rds On Drain Source Resistance is 336 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 15 ns, and Typical Turn On Delay Time is 9 ns, and the Channel Mode is Enhancement.

The FDMC3300NZ is MOSFET 2N-CH 20V 8A POWER33 manufactured by FAIRCHILD. The FDMC3300NZ is available in 8-PowerVDFN Package, is part of the FETs - Arrays, , and with support for MOSFET 2N-CH 20V 8A POWER33.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
8A Current - Continuous Drain (Id) @ 25°C
26mOhm @ 8A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
12nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
815pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
2.1W Power - Max
Surface Mount Mounting Type