ON FDMC612PZ

P-канал20 V14A (Ta)1,5 В @ 250 мкА2,3 Вт (Ta), 26 Вт (Tc)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The FDMC5614P is MOSFET P-CH 60V 5.7A POWER33, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.007055 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-PowerWDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a 8-Power33 (3x3) of Supplier Device Package, and Configuration is Single Quad Drain Triple Source, and the FET Type is MOSFET P-Channel, Metal Oxide, and Power Max is 2.1W, and the Transistor Type is 1 P-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 1055pF @ 30V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 5.7A (Ta), 13.5A (Tc), and Rds On Max Id Vgs is 100 mOhm @ 5.7A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 20nC @ 10V, and the Pd Power Dissipation is 2.1 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 11 ns, and the Rise Time is 11 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 13.5 A, and Vds Drain Source Breakdown Voltage is - 60 V, and the Rds On Drain Source Resistance is 84 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 32 ns, and Typical Turn On Delay Time is 10 ns, and the Channel Mode is Enhancement.

FDMC610P with circuit diagram, that includes Single Quad Drain Triple Source Configuration, they are designed to operate with a 87 ns Fall Time, Forward Transconductance Min is shown on datasheet note for use in a 16 S, that offers Id Continuous Drain Current features such as - 80 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device can also be used as SMD/SMT Mounting Style. In addition, the Number of Channels is 1 Channel, the device is offered in Power-33-8 Package Case, the device has a Reel of Packaging, and Pd Power Dissipation is 2.4 W, and the Rds On Drain Source Resistance is 3.9 mOhms, and Rise Time is 37 ns, and the Technology is Si, and Transistor Polarity is P-Channel, and the Transistor Type is 1 P-Channel, and Typical Turn Off Delay Time is 193 ns, and the Typical Turn On Delay Time is 24 ns, and Unit Weight is 0.001133 oz, and the Vds Drain Source Breakdown Voltage is - 12 V.

Features

• At Vgg = -4.5 V, Iq = -14 A, MaxDs(on) = 844 mQ.

• At Vgg = -2.5 V, Iq = -11 A, MaxDS(on)= 43 mfl.

• High power and current handling capability in a widely used surface mount package with high performance trench technology for extremely low rDS(on).

• Tefmination is RoHS compliant and lead-free. HBM ESD capability level > 3.6 KV is normal (Note 4)

Applications

• Battery Management is a term that refers to the process of managing a battery.

• Activate the load switch