ON FDMC6683

P-канал20 V12A (Ta), 18A (Tc)1 В @ 250 мкА2,3 Вт (Ta), 41 Вт (Tc)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The FDMC6679AZ is MOSFET P-CH 30V POWER33, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.007408 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-PowerWDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a 8-MLP (3.3x3.3) of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET P-Channel, Metal Oxide, and Power Max is 2.3W, and the Transistor Type is 1 P-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 3970pF @ 15V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 11.5A (Ta), 20A (Tc), and Rds On Max Id Vgs is 10 mOhm @ 11.5A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 91nC @ 10V, and the Pd Power Dissipation is 41 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 25 V, and the Id Continuous Drain Current is - 20 A, and Vds Drain Source Breakdown Voltage is - 30 V, and the Vgs th Gate Source Threshold Voltage is - 1.8 V, and Rds On Drain Source Resistance is 10 mOhms, and the Transistor Polarity is P-Channel, and Qg Gate Charge is 37 nC, and the Forward Transconductance Min is 46 S.

FDMC6676BZ with circuit diagram manufactured by FSC. The FDMC6676BZ is available in QFN-8 Package, is part of the IC Chips.

Features

PowerTrench® Series
Bulk Package
MOSFET (Metal Oxide) Technology
20 V Drain to Source Voltage (Vdss)
12A (Ta), 18A (Tc) Current - Continuous Drain (Id) @ 25°C
1.8V, 5V Drive Voltage (Max Rds On, Min Rds On)
8.3mOhm @ 12A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
114 nC @ 4.5 V Gate Charge (Qg) (Max) @ Vgs
±8V Vgs (Max)
7835 pF @ 10 V Input Capacitance (Ciss) (Max) @ Vds
2.3W (Ta), 41W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type