ON FDMC9430L-F085

MOSFET (оксид металла)2 N-канала (сдвоенные)40V12A8 мОм @ 12 А, 10 В3 В @ 250 мкА

Overview

The FDMC8884 is MOSFET N-CH 30V 9A POWER33, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.007055 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-PowerWDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a 8-MLP (3.3x3.3) of Supplier Device Package, and Configuration is Single Quad Drain Triple Source, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 2.3W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 685pF @ 15V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 9A (Ta), 15A (Tc), and Rds On Max Id Vgs is 19 mOhm @ 9A, 10V, and the Vgs th Max Id is 2.5V @ 250μA, and Gate Charge Qg Vgs is 14nC @ 10V, and the Pd Power Dissipation is 2.3 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 2 ns, and the Rise Time is 2 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 9 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 19 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 15 ns, and Typical Turn On Delay Time is 6 ns, and the Qg Gate Charge is 5 nC 10 nC, and Channel Mode is Enhancement.

FDMC8883 with EDA / CAD Models manufactured by FAIRCHILD. The FDMC8883 is available in DFN-8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
40V Drain to Source Voltage (Vdss)
12A Current - Continuous Drain (Id) @ 25°C
8mOhm @ 12A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
22nC @ 10V Gate Charge (Qg) (Max) @ Vgs
984pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
11.4W Power - Max
Surface Mount Mounting Type