ON FDME910PZT

P-канал20 V8A (Ta)1,5 В @ 250 мкА2,1 Вт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

 This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

„ Free from halogenated compounds and antimony oxides

Features

• Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A

• Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A

• Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A

• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

• HBM ESD protection level > 2 kV typical (Note 3)

• Free from halogenated compounds and antimony oxides

• RoHS Compliant

Applications

• Mobile phones

• Tablets

• Laptops

• Battery charging

• Load switching in the cellular handset