ON FDMS7620S

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)30V10.1A, 12.4A20 мОм @ 10,1 А, 10 В3 В @ 250 мкА

Overview

This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal synchronous buck power stage in terms of efficiency and PCB utilization. The low switching loss “High Side” MOSFET is complementory by a low conduction loss “Low Side” SyncFET.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
10.1A, 12.4A Current - Continuous Drain (Id) @ 25°C
20mOhm @ 10.1A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
11nC @ 10V Gate Charge (Qg) (Max) @ Vgs
608pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
1W Power - Max
Surface Mount Mounting Type
Power56 Supplier Device Package

Applications

 

Q1: N-Channel

Max rDS(on) = 20.0 m? at VGS = 10 V, ID = 10.1 A

Max rDS(on) = 30.0 m? at VGS = 4.5 V, ID = 7.5 A

Q2: N-Channel

Max rDS(on) = 11.2 m? at VGS = 10 V, ID = 12.4 A

Max rDS(on) = 14.2 m? at VGS = 4.5 V, ID = 10.9 A

Pinout optimized for simple PCB design

Thermally efficient dual Power 56 Package

RoHS Compliant

FDMS7620S                Applications

Notebook PC