ON FDMS8333L

N-канальный40 V22A (Ta), 76A (Tc)3 В @ 250 мкА2,5 Вт (Ta), 69 Вт (Tc)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
40 V Drain to Source Voltage (Vdss)
22A (Ta), 76A (Tc) Current - Continuous Drain (Id) @ 25°C
4.5V, 10V Drive Voltage (Max Rds On, Min Rds On)
3.1mOhm @ 22A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
64 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
4545 pF @ 20 V Input Capacitance (Ciss) (Max) @ Vds
2.5W (Ta), 69W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type

Applications

Max RDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A

Max RDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

Next generation enhanced body diode technology, engineered for soft recovery

MSL1 robust package design

100% UIL tested

RoHS Compliant

Applications

Consumer

FDMS8333L     Applications

low gate charge

 low RDS