ON FDP12N50NZ

N-канальный500 V11,5A (Tc)5 В @ 250 мкА170 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

Features

Bulk Package
MOSFET (Metal Oxide) Technology
500 V Drain to Source Voltage (Vdss)
11.5A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
520mOhm @ 5.75A, 10V Rds On (Max) @ Id, Vgs
5V @ 250µA Vgs(th) (Max) @ Id
30 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±25V Vgs (Max)
1235 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
170W (Tc) Power Dissipation (Max)
Through Hole Mounting Type

Applications

·RDS(on)=460mΩ(Typ.)@VGs=10Vlp=5.75A

·Low Gate Charge(Typ.23nC)·Low Crss(Typ.14pF)

100% Avalanche Tested·ESD Improved Capability

·RoHS Compliant

 

FDP12N50NZ   Applications

·LCD/LED/PDPTV Lighting

Uninterruptible Power Supply