ON FDP3632

N-канальный100 V12A (Ta), 80A (Tc)4 В @ 250 мкА310 Вт (Тс)-55°C ~ 175°C (TJ)Сквозное отверстие

Overview

The FDP33N25 is MOSFET N-CH 250V 33A TO-220, that includes Tube Packaging, they are designed to operate with a 0.063493 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 235 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 120 ns, and Rise Time is 230 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 33 A, and the Vds Drain Source Breakdown Voltage is 250 V, and Rds On Drain Source Resistance is 94 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 75 ns, and the Typical Turn On Delay Time is 35 ns, and Forward Transconductance Min is 26.6 S, and the Channel Mode is Enhancement.

The FDP34N33 is MOSFET N-CH 330V 34A TO-220 manufactured by FSC. The FDP34N33 is available in TO-220 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 330V 34A TO-220, N-Channel 330V Through Hole TO-220-3.

Features

? Low Qrr Body Diode

? UIS Capability (Single Pulse and Repetitive Pulse)

? These Devices are Pb?Free and are RoHS Compliant

? RDS(ON) = 7.5 m (Typ.), VGS = 10 V, ID = 80 A

? Qg (tot) = 84 nC (Typ.), VGS = 10 V

? Low Miller Charge

Applications

? Synchronous Rectification

? Battery Protection Circuit

? Motor Drives and Uninterruptible Power Supplies

? Micro Solar Inverter

? Circuit