ON FDS6910

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)30V7.5A13 мОм @ 7,5 А, 10 В3 В @ 250 мкА

Overview

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
7.5A Current - Continuous Drain (Id) @ 25°C
13mOhm @ 7.5A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
24nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1130pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
900mW Power - Max
Surface Mount Mounting Type

Applications

7.5A, 30V

?RDS(ON) = 13 mΩ @ VGS = 10V

?RDS(ON) = 17 mΩ @ VGS = 4.5V

Fast switching speed

Low gate charge

High performance trench technology for extremely low RDS(ON)

High power and current handling capability

FDS6910           Applications

This product is general usage and suitable for many different applications.