ON FDS6982AS

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)30V6.3A, 8.6A28 мОм @ 6,3 А, 10 В3 В @ 250 мкА

Overview

Designed to minimise losses in power conversion, while maintaining excellent switching performanceHigh Performance Trench Technology for extremely low RDS(on)SyncFET™ benefits from an efficient Schottky body diodeApplications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch

Features

PowerTrench®, SyncFET™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
6.3A, 8.6A Current - Continuous Drain (Id) @ 25°C
28mOhm @ 6.3A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
15nC @ 10V Gate Charge (Qg) (Max) @ Vgs
610pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
900mW Power - Max
Surface Mount Mounting Type

Applications

 

Q2

Optimized to minimize conduction losses

Includes SyncFET Schottky body diode

8.6A, 30V

Max. RDS(on) = 13.5 m|? at VGS = 10 V

Max. RDS(on) = 16.5 m|? at VGS = 4.5 V

Low gate charge (21nC typical)

Q1

Optimized for low switching losses

6.3A, 30V

Max. RDS(on) = 28.0 m|? at VGS = 10 V

Max. RDS(on) = 35.0 m|? at VGS = 4.5 V

Low gate charge (11nC typical)

FDS6982AS    Applications

This product is general usage and suitable for many different applications.

Notebook