ON FDS9431A

P-канал20 V3,5 А (Ta)1 В @ 250 мкА2,5 Вт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

• Load Switching• DC/DC converter• Battery protection• Power management control• DC motor control

Features

Bulk Package
MOSFET (Metal Oxide) Technology
20 V Drain to Source Voltage (Vdss)
3.5A (Ta) Current - Continuous Drain (Id) @ 25°C
2.5V, 4.5V Drive Voltage (Max Rds On, Min Rds On)
130mOhm @ 3.5A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
8.5 nC @ 4.5 V Gate Charge (Qg) (Max) @ Vgs
±8V Vgs (Max)
405 pF @ 10 V Input Capacitance (Ciss) (Max) @ Vds
2.5W (Ta) Power Dissipation (Max)
Surface Mount Mounting Type