ON FDW2507NZ

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)20V7.5A19 мОм @ 7,5 А, 4,5 В1,5 В @ 250 мкА

Overview

The FDW2507N is MOSFET 2N-CH 20V 7.5A 8-TSSOP, that includes PowerTrenchR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-TSSOP (0.173", 4.40mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-TSSOP Supplier Device Package, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Power Max is 1.1W, the device is offered in 20V Drain to Source Voltage Vdss, the device has a 2152pF @ 10V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 7.5A, and Rds On Max Id Vgs is 19 mOhm @ 7.5A, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 28nC @ 4.5V.

FDW2507 with circuit diagram manufactured by KEXIN. The FDW2507 is available in TSSOP08 Package, is part of the FETs - Arrays.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
7.5A Current - Continuous Drain (Id) @ 25°C
19mOhm @ 7.5A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
28nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
2152pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
1.1W Power - Max
Surface Mount Mounting Type