ON FDZ2553NZ

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)20V9.6A14 мОм @ 9,6 А, 4,5 В1,5 В @ 250 мкА

Overview

The FDZ2553N is MOSFET 2N-CH 20V 9.6A BGA, that includes PowerTrenchR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 18-WFBGA, it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 18-BGA (2.5x4) Supplier Device Package, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Power Max is 2.1W, the device is offered in 20V Drain to Source Voltage Vdss, the device has a 1299pF @ 10V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 9.6A, and Rds On Max Id Vgs is 14 mOhm @ 9.6A, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 17nC @ 4.5V.

FD-Z20W with circuit diagram, that includes Reflective Sensing Method, they are designed to operate with a FX-500 Series.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
9.6A Current - Continuous Drain (Id) @ 25°C
14mOhm @ 9.6A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
18nC @ 5V Gate Charge (Qg) (Max) @ Vgs
1240pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
2.1W Power - Max
Surface Mount Mounting Type