ON FDZ4010

Общее назначение12 В ~ 5 В10 мА

Overview

The FDZ371PZ is MOSFET P-CH 20V 3.7A WLCSP, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.002413 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 4-XFBGA, WLCSP, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a 4-WLCSP (1x1) of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET P-Channel, Metal Oxide, and Power Max is 500mW, and the Transistor Type is 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 1000pF @ 10V, and FET Feature is Logic Level Gate, 1.5V Drive, and the Current Continuous Drain Id 25°C is 3.7A (Ta), and Rds On Max Id Vgs is 75 mOhm @ 2A, 4.5V, and the Vgs th Max Id is 1V @ 250μA, and Gate Charge Qg Vgs is 17nC @ 4.5V, and the Pd Power Dissipation is 1.7 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 88 ns, and the Rise Time is 9.1 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is - 3.7 A, and Vds Drain Source Breakdown Voltage is - 20 V, and the Rds On Drain Source Resistance is 100 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 124 ns, and Typical Turn On Delay Time is 5.9 ns, and the Forward Transconductance Min is 14 S, and Channel Mode is Enhancement.

The FDZ375P is MOSFET 20V P-Channel 1.5V Specfied PowerTrench, that includes WLCSP-4 Package Case, they are designed to operate with a SMD/SMT Mounting Style, Configuration is shown on datasheet note for use in a Single, that offers Technology features such as Si, Packaging is designed to work in Reel, as well as the P-Channel Transistor Polarity, the device can also be used as 15 nC Qg Gate Charge. In addition, the Rds On Drain Source Resistance is 143 mOhms, the device is offered in 11 S Forward Transconductance Min, the device has a 1.7 W of Pd Power Dissipation, and Transistor Type is 1 P-Channel, and the Number of Channels is 1 Channel, and Unit Weight is 0.002413 oz, and the Vgs Gate Source Voltage is +/- 8 V, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is - 3.7 A, and Vds Drain Source Breakdown Voltage is - 20 V, and the Vgs th Gate Source Threshold Voltage is - 1.2 V.

Features

Applications

• Set-top-box
• USB Power Distribution
• Notebook PC
• Telecom and Network Systems
• PC Card Hot Swap
• Storage Drives
• Portable/Handheld Devices
• Wireless/Networking Cards
• Low Voltage I/O System Power
• Hard Disk Drives