ON FGH75T65UPD-F085

650 V150 A2,85 мДж (вкл.), 1,2 мДж (выкл.)-55°C ~ 175°C (TJ)TO-247-3

Overview

FGH75T65SHDT_F155 with pin details, that includes Tube Packaging, they are designed to operate with a 1.340411 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-247-3, Technology is designed to work in SiC, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-247, the device is offered in Single Configuration, the device has a 455W of Power Max, and Reverse Recovery Time trr is 76ns, and the Current Collector Ic Max is 150A, and Voltage Collector Emitter Breakdown Max is 650V, and the IGBT Type is Trench Field Stop, and Current Collector Pulsed Icm is 225A, and the Vce on Max Vge Ic is 2.1V @ 15V, 75A, and Switching Energy is 3mJ (on), 750μJ (off), and the Gate Charge is 123nC, and Td on off 25°C is 28ns/86ns, and the Test Condition is 400V, 75A, 3 Ohm, 15V, and Pd Power Dissipation is 455 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 650 V, and Collector Emitter Saturation Voltage is 1.6 V, and the Continuous Collector Current at 25 C is 150 A, and Gate Emitter Leakage Current is +/- 400 nA, and the Maximum Gate Emitter Voltage is +/- 20 V, and Continuous Collector Current Ic Max is 75 A.

FGH75T65SQD_F155 with circuit diagram, that includes 150A Current Collector Ic Max, they are designed to operate with a 300A Current Collector Pulsed Icm, Gate Charge is shown on datasheet note for use in a 128nC, that offers IGBT Type features such as Trench Field Stop, Input Type is designed to work in Standard, as well as the Through Hole Mounting Type, the device can also be used as TO-247-3 Package Case. In addition, the Packaging is Tube, the device is offered in 375W Power Max, the device has a 43ns of Reverse Recovery Time trr, and Supplier Device Package is TO-247, and the Switching Energy is 760μJ (on), 180μJ (off), and Voltage Collector Emitter Breakdown Max is 650V.

Features

Maximum Junction Temperature: TJ = 175°C

Positive Temperature Co?efficient for Easy Parallel Operating

High Current Capability

Low Saturation Voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 75 A

High Input Impedance

Tightened Parameter Distribution

AEC?Q101Qualified and PPAP Capable

This Device is Pb?Free and is RoHS Compliant

Applications

Automotive Chargers, Converters, High Voltage Auxiliaries

Solar Inverters, UPS, Digital Power Generator