ON FJP13009H2TU

NPN12 A400 V

Overview

The FJP13009H2TU is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. The FJP13009H2TU is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation.

Features

Tube Package
the DC current gain for this device is 15 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz

Through Hole Mounting Type

Applications

There are a lot of ON Semiconductor
FJP13009H2TU applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting