ON FQB34P10TM-F085

P-канал100 V33,5A (Tc)4 В @ 250 мкА3,75 Вт (Ta), 155 Вт (Tc)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The FQB34P10TM is MOSFET P-CH 100V 33.5A D2PAK, that includes QFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a FQB34P10TM_NL, that offers Unit Weight features such as 0.046296 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is TO-263-2, and the Configuration is Single, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 3.75W, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 100V, and Input Capacitance Ciss Vds is 2910pF @ 25V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 33.5A (Tc), and the Rds On Max Id Vgs is 60 mOhm @ 16.75A, 10V, and Vgs th Max Id is 4V @ 250μA, and the Gate Charge Qg Vgs is 110nC @ 10V, and Pd Power Dissipation is 3.75 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 210 ns, and Rise Time is 250 ns, and the Vgs Gate Source Voltage is 25 V, and Id Continuous Drain Current is - 33.5 A, and the Vds Drain Source Breakdown Voltage is - 100 V, and Rds On Drain Source Resistance is 60 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 160 ns, and the Typical Turn On Delay Time is 25 ns, and Forward Transconductance Min is 23 S, and the Channel Mode is Enhancement.

FQB34P10TM_F085 with EDA / CAD Models manufactured by Fairchild. The FQB34P10TM_F085 is available in TO-2632L(D2PAK) Package, is part of the Transistors - FETs, MOSFETs - Single, , and with support for "MOSFET -33.5A, MOSFET -33.5A,-100V, P-ch.

Features

Tape & Reel (TR) Package
the avalanche energy rating (Eas) is 2200 mJ
a continuous drain current (ID) of 33.5A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 160 ns
a 100V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications

There are a lot of ON Semiconductor
FQB34P10TM-F085 applications of single MOSFETs transistors.

• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.
• DC-to-DC converters