ON FW811-TL-E

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)35V8A24 мОм @ 8 А, 10 В2,6 В @ 1 мА

Overview

The FW80960VH100 is IC MPU I960 100MHZ 324BGA, that includes i960 Series, they are designed to operate with a Tray Packaging, Package Case is shown on datasheet note for use in a 324-BGA, it has an Operating Temperature range of 0°C ~ 95°C (TC), Supplier Device Package is designed to work in 324-BGA, as well as the 3.3V Voltage I O, the device can also be used as 100MHz Speed. In addition, the Core Processor is i960, the device is offered in 1 Core, 32-Bit Number of Cores Bus Width, the device has a DRAM of RAM Controllers, and Graphics Acceleration is No.

FW808-TL-E with circuit diagram manufactured by SANYO. The FW808-TL-E is available in SOP8PB Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
35V Drain to Source Voltage (Vdss)
8A Current - Continuous Drain (Id) @ 25°C
24mOhm @ 8A, 10V Rds On (Max) @ Id, Vgs
2.6V @ 1mA Vgs(th) (Max) @ Id
13nC @ 10V Gate Charge (Qg) (Max) @ Vgs
660pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
2.2W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type