ON FW813-TL-H

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)60V5A49 мОм @ 5А, 10В

Overview

The FW812-TL-E is MOSFET 2N-CH 35V 10A 8SOP, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 8-SOIC (0.173", 4.40mm Width) Package Case, it has an Operating Temperature range of 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 8-SOP, as well as the 2 N-Channel (Dual) FET Type, the device can also be used as 2.5W Power Max. In addition, the Drain to Source Voltage Vdss is 35V, the device is offered in 960pF @ 20V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 10A, and the Rds On Max Id Vgs is 17 mOhm @ 10A, 10V, and Vgs th Max Id is 2.6V @ 1mA, and the Gate Charge Qg Vgs is 19nC @ 10V.

FW808-TL-E with EDA / CAD Models manufactured by SANYO. The FW808-TL-E is available in SOP8PB Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
5A Current - Continuous Drain (Id) @ 25°C
49mOhm @ 5A, 10V Rds On (Max) @ Id, Vgs
15nC @ 10V Gate Charge (Qg) (Max) @ Vgs
725pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
2.5W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type