ON H11A817

1Транзистор-55°C ~ 100°C

Overview

The H11A617DW is OPTOISO 5.3KV TRANSISTOR 4DIP, that includes Tube Packaging, they are designed to operate with a 4-DIP (0.400", 10.16mm) Package Case, Input Type is shown on datasheet note for use in a DC, it has an Operating Temperature range of -55°C ~ 100°C, Mounting Type is designed to work in Through Hole, as well as the Transistor Output Type, the device can also be used as 1 Number of Channels. In addition, the Supplier Device Package is 4-DIP, the device is offered in 50mA Current Output Channel, the device has a 70V of Voltage Output Max, and Current DC Forward If Max is 50mA, and the Voltage Isolation is 5300Vrms, and Voltage Forward Vf Typ is 1.35V, and the Current Transfer Ratio Min is 160% @ 10mA, and Current Transfer Ratio Max is 320% @ 10mA, and the Rise Fall Time Typ is 2.4μs, 2.4μs, and Vce Saturation Max is 400mV.

H11A814C with circuit diagram manufactured by FAI. The H11A814C is available in SOP Package, is part of the IC Chips.

Features

Tube Package
1 Number of Channels
5300Vrms Voltage - Isolation
50% @ 5mA Current Transfer Ratio (Min)
600% @ 5mA Current Transfer Ratio (Max)
2.4µs, 2.4µs Rise / Fall Time (Typ)
DC Input Type
Transistor Output Type
70V Voltage - Output (Max)
50mA Current - Output / Channel
1.2V Voltage - Forward (Vf) (Typ)
50 mA Current - DC Forward (If) (Max)
200mV Vce Saturation (Max)
Through Hole Mounting Type