ON H11D1

1Транзистор с базой-55°C ~ 100°C

Overview

DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Other data sheets within the file : 4N38, 4N38.300, 4N38.S

Features

Tube Package
1 Number of Channels
5300Vrms Voltage - Isolation
20% @ 10mA Current Transfer Ratio (Min)
5µs, 5µs Turn On / Turn Off Time (Typ)
DC Input Type
Transistor with Base Output Type
300V Voltage - Output (Max)
100mA Current - Output / Channel
1.15V Voltage - Forward (Vf) (Typ)
80 mA Current - DC Forward (If) (Max)
400mV Vce Saturation (Max)
Through Hole Mounting Type