ON IRF630B_FP001

N-канальный200 V9A (Tc)4 В @ 250 мкА72 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features • 9.0A, 200V, RDS(on)= 0.4Ω@VGS= 10 V • Low gate charge ( typical 22 nC) • Low Crss ( typical 22 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability

Features

Tube Package
MOSFET (Metal Oxide) Technology
200 V Drain to Source Voltage (Vdss)
9A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
400mOhm @ 4.5A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
29 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
720 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
72W (Tc) Power Dissipation (Max)
Through Hole Mounting Type