ON IRF740B

N-канальный400 V10A (Tc)4 В @ 250 мкА134 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The IRF740ASTRLPBF is MOSFET N-CH 400V 10A D2PAK, that includes IRF/SIHF740Ax Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.050717 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 3.1 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 22 ns, and the Rise Time is 35 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 10 A, and Vds Drain Source Breakdown Voltage is 400 V, and the Rds On Drain Source Resistance is 550 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 24 ns, and Typical Turn On Delay Time is 10 ns, and the Channel Mode is Enhancement.

IRF740ASTR with circuit diagram manufactured by IR. The IRF740ASTR is available in TO263 Package, is part of the FETs - Single.

Features

Tube Package
MOSFET (Metal Oxide) Technology
400 V Drain to Source Voltage (Vdss)
10A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
540mOhm @ 5A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
53 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
1800 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
134W (Tc) Power Dissipation (Max)
Through Hole Mounting Type

Applications

·10A,400VRDs(on)=0.54Ω @VGs=10 V·Low gate charge(typical 41 nC)

·Low Crss(typical 35 pF) Fast switching

100% avalanche tested Improved dvidt capability

 

  

 

IRF740B   Applications

efficient switching mode power supplies

half-bridge-based electronic lamp ballasts