ON IRFS540A

N-канальный100 V17A (Tc)4 В @ 250 мкА39 Вт (Тс)-55°C ~ 175°C (TJ)Сквозное отверстие

Overview

The IRFS52N15DTRRP is MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC, that includes Reel Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 3.8 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 25 ns, and Rise Time is 47 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 44 A, and the Vds Drain Source Breakdown Voltage is 150 V, and Rds On Drain Source Resistance is 32 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 28 ns, and the Typical Turn On Delay Time is 16 ns, and Qg Gate Charge is 60 nC, and the Channel Mode is Enhancement.

IRFS530A with circuit diagram manufactured by FAIRCHILD. The IRFS530A is available in O-NEW Package, is part of the IC Chips.

Features

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

175℃Operating Temperature

Lower Leakage Current:10∞A(Max.)@Vs=100V

Lower RDS(ON):0.041 Ω(Typ.)

Applications

 power switching circuits