ON J175_D75Z

30 V125 ОмTO-226-3, TO-92-3 (TO-226AA) Формируемые выводы

Overview

J175_D26Z with pin details, that includes Cut Tape (CT) Alternate Packaging Packaging, they are designed to operate with a 0.001940 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type is designed to work in Through Hole, as well as the TO-92-3 Supplier Device Package, the device can also be used as Single Configuration. In addition, the FET Type is P-Channel, the device is offered in 350mW Power Max, the device has a 30V of Voltage Breakdown V BRGSS, and Current Drain Idss Vds Vgs=0 is 7mA @ 15V, and the Voltage Cutoff VGS off Id is 3V @ 10nA, and Resistance RDS On is 125 Ohm, and the Pd Power Dissipation is 350 mW, and Rds On Drain Source Resistance is 125 Ohms, and the Transistor Polarity is P-Channel, and Vgs Gate Source Breakdown Voltage is 30 V, and the Gate Source Cutoff Voltage is 6 V.

J175_D75Z with EDA / CAD Models, that includes TO-92-3 Supplier Device Package, they are designed to operate with a TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Packaging features such as Tape & Box (TB), FET Type is designed to work in P-Channel, as well as the 7mA @ 15V Current Drain Idss Vds Vgs=0, the device can also be used as 3V @ 10nA Voltage Cutoff VGS off Id. In addition, the Power Max is 350mW, the device is offered in 30V Voltage Breakdown V BRGSS, the device has a 125 Ohm of Resistance RDS On.

Features