ON KSH44H11TF

NPN8 A80 V

Overview

The KSH42CTM is Bipolar Transistors - BJT 100V6A PNP Epitaxial Silicon Transistor, that includes Reel Packaging, they are designed to operate with a 0.009184 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as D-PAK-3, Configuration is designed to work in Single, as well as the 20 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C. In addition, the Collector Emitter Voltage VCEO Max is - 100 V, the device is offered in PNP Transistor Polarity, the device has a - 1.5 V of Collector Emitter Saturation Voltage, and Collector Base Voltage VCBO is - 100 V, and the Emitter Base Voltage VEBO is - 5 V, and Maximum DC Collector Current is - 6 A, and the Gain Bandwidth Product fT is 3 MHz, and Continuous Collector Current is - 6 A, and the DC Collector Base Gain hfe Min is 15, and DC Current Gain hFE Max is 75.

KSH44H11 with circuit diagram manufactured by FAI. The KSH44H11 is available in SOT252 Package, is part of the Transistors (BJT) - Single.

Features

Tape & Reel (TR) Package
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz

Surface Mount Mounting Type

Applications

There are a lot of ON Semiconductor
KSH44H11TF applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting