ON MCH6660-TL-W

MOSFET (оксид металла)Затвор логического уровня, преобразователь 1,8 ВN- и P-каналы20V2A, 1.5A136 мОм @ 1A, 4,5 В1,3 В @ 1 мА

Overview

The MCH6660-TL-H is MOSFET N/P-CH 20V 2A/1.5A MCPH6, that includes MCH6660 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.000265 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-SMD, Flat Leads, as well as the Si Technology, it has an Operating Temperature range of 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 6-MCPH of Supplier Device Package, and FET Type is N and P-Channel, and the Power Max is 800mW, and Transistor Type is 1 N-Channel 1 P-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 128pF @ 10V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 2A, 1.5A, and the Rds On Max Id Vgs is 136 mOhm @ 1A, 4.5V, and Gate Charge Qg Vgs is 1.8nC @ 4.5V, and the Pd Power Dissipation is 800 mW, and Id Continuous Drain Current is 2 A - 1.5 A, and the Vds Drain Source Breakdown Voltage is 20 V, and Rds On Drain Source Resistance is 136 mOhms 266 mOhms, and the Transistor Polarity is N-Channel P-Channel.

MCH6657-TL-E with circuit diagram manufactured by SANYO. The MCH6657-TL-E is available in MCPH6 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate, 1.8V Drive FET Feature
20V Drain to Source Voltage (Vdss)
2A, 1.5A Current - Continuous Drain (Id) @ 25°C
136mOhm @ 1A, 4.5V Rds On (Max) @ Id, Vgs
1.3V @ 1mA Vgs(th) (Max) @ Id
1.8nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
128pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
800mW Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type