ON MMDF1N05ER2G

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)50V2A300 мОм @ 1,5 А, 10 В3 В @ 250 мкА

Overview

The MMDF1N05ER2 is MOSFET 2N-CH 50V 2A 8-SOIC, that includes Cut Tape (CT) Packaging, they are designed to operate with a 8-SOIC (0.154", 3.90mm Width) Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 8-SOIC, as well as the 2 N-Channel (Dual) FET Type, the device can also be used as 2W Power Max. In addition, the Drain to Source Voltage Vdss is 50V, the device is offered in 330pF @ 25V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 2A, and the Rds On Max Id Vgs is 300 mOhm @ 1.5A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 12.5nC @ 10V.

MMDF1N05DR2 with circuit diagram manufactured by MOT. The MMDF1N05DR2 is available in SOP8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
50V Drain to Source Voltage (Vdss)
2A Current - Continuous Drain (Id) @ 25°C
300mOhm @ 1.5A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
12.5nC @ 10V Gate Charge (Qg) (Max) @ Vgs
330pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type