ON MMDF3N04HDR2G

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)40V3.4A80 мОм @ 3,4 А, 10 В3 В @ 250 мкА

Overview

The MMDF3N04HDR2 is MOSFET 2N-CH 40V 3.4A 8-SOIC, that includes Cut Tape (CT) Packaging, they are designed to operate with a 8-SOIC (0.154", 3.90mm Width) Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 8-SOIC, as well as the 2 N-Channel (Dual) FET Type, the device can also be used as 1.39W Power Max. In addition, the Drain to Source Voltage Vdss is 40V, the device is offered in 900pF @ 32V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 3.4A, and the Rds On Max Id Vgs is 80 mOhm @ 3.4A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 28nC @ 10V.

MMDF3N04HD with circuit diagram manufactured by ON. The MMDF3N04HD is available in SOP8 Package, is part of the FETs - Arrays.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
40V Drain to Source Voltage (Vdss)
3.4A Current - Continuous Drain (Id) @ 25°C
80mOhm @ 3.4A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
28nC @ 10V Gate Charge (Qg) (Max) @ Vgs
900pF @ 32V Input Capacitance (Ciss) (Max) @ Vds
1.39W Power - Max
Surface Mount Mounting Type