ON NDD03N60ZT4G

N-канальный600 V2.6A (Tc)4,5 В @ 50 мкА61 Вт (Тс)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The NDD03N50ZT4G is MOSFET N-CH 500V 2.6A DPAK, that includes Reel Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 58 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 7 ns, and the Rise Time is 7 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 2.6 A, and Vds Drain Source Breakdown Voltage is 500 V, and the Rds On Drain Source Resistance is 3.3 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 15 ns, and Typical Turn On Delay Time is 9 ns, and the Qg Gate Charge is 16 nC, and Forward Transconductance Min is 1.8 S.

The NDD03N50Z-1G is MOSFET N-CH 500V 2.6A IPAK, that includes Single Configuration, they are designed to operate with a 2.6 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, Mounting Style is designed to work in Through Hole, as well as the 1 Channel Number of Channels, the device can also be used as IPAK-3 Package Case. In addition, the Packaging is Tube, the device is offered in 58 W Pd Power Dissipation, the device has a 3.3 Ohms of Rds On Drain Source Resistance, and Technology is Si, and the Transistor Polarity is N-Channel, and Transistor Type is 1 N-Channel, and the Unit Weight is 0.139332 oz, and Vds Drain Source Breakdown Voltage is 500 V, and the Vgs Gate Source Voltage is 30 V.

Features

• Low on-state resistance

• Low gate charge

• 100% avalanche rated

• ESD diode?protected gate

• Available in the TO-220FP package

Applications

• High-speed power switching

• Uninterruptible power supplies

• Synchronous rectification