ON NDD03N80ZT4G

N-канальный800 V2.9A (Tc)4,5 В @ 50 мкА96 Вт (Тс)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The NDD03N60Z-1G is MOSFET NFET IPAK 600V 2.6A 3.6R, that includes Tube Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as IPAK-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 61 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 55 C, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 1.65 A, and the Vds Drain Source Breakdown Voltage is 600 V, and Vgs th Gate Source Threshold Voltage is 4.5 V, and the Rds On Drain Source Resistance is 3.3 Ohms, and Transistor Polarity is N-Channel, and the Qg Gate Charge is 12 nC, and Forward Transconductance Min is 2 S.

The NDD03N80Z-1G is MOSFET NFET DPAK 800V 2.9A 4.5OH, that includes 2.9 A Id Continuous Drain Current, they are designed to operate with a SMD/SMT Mounting Style, Number of Channels is shown on datasheet note for use in a 1 Channel, that offers Package Case features such as IPAK-3, Packaging is designed to work in Tube, as well as the 4.5 Ohms Rds On Drain Source Resistance, the device can also be used as Si Technology. In addition, the Transistor Polarity is N-Channel, the device is offered in 1 N-Channel Transistor Type, the device has a 0.139332 oz of Unit Weight, and Vds Drain Source Breakdown Voltage is 800 V.

Features

• ESD Diode?Protected Gate

• 100% Avalanche Tested

• 100% Rg Tested

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial