ON NDD04N60ZT4G

N-канальный600 V4.1A (Tc)4,5 В @ 50 мкА83 Вт (Тс)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The NDD04N60Z-1G is MOSFET N-CH 600V 4A IPAK, that includes Tube Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as IPAK-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 83 W Pd Power Dissipation, the device has a 4.1 A of Id Continuous Drain Current, and Vds Drain Source Breakdown Voltage is 600 V, and the Vgs th Gate Source Threshold Voltage is 4.5 V, and Rds On Drain Source Resistance is 1.8 Ohms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 19 nC, and the Forward Transconductance Min is 3.3 S.

NDD04N60ZG with circuit diagram manufactured by ON. The NDD04N60ZG is available in TO252 Package, is part of the IC Chips.

Features

• Low on-state resistance

• Low gate charge

• ESD diode-protected gate

• Advanced switching performance

• Available in the DPAK package

Applications

• Uninterruptible power supplies

• Synchronous rectification

• Switching applications