ON NDF10N62ZG

N-канальный620 V10A (Tc)4,5 В @ 100 мкА36 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The NDF10N60ZH is MOSFET N-CH 600V 10A TO-220FP, that includes Tube Packaging, they are designed to operate with a 0.211644 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 39 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 23 ns, and Rise Time is 31 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 10 A, and the Vds Drain Source Breakdown Voltage is 600 V, and Rds On Drain Source Resistance is 650 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 47 nC, and the Forward Transconductance Min is 7.9 S.

The NDF10N60ZG is MOSFET N-CH 600V 10A TO-220FP manufactured by ON. The NDF10N60ZG is available in TO-220-3 Full Pack Package, is part of the FETs - Single, , and with support for MOSFET N-CH 600V 10A TO-220FP, N-Channel 600V 10A (Tc) 39W (Tc) Through Hole TO-220FP, Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube.

Features

• Low on-state resistance

• Low gate charge

• 100% avalanche rated

• ESD diode?protected gate

• Available in the TO-220FP package

Applications

• High-speed power switching

• Uninterruptible power supplies

• Synchronous rectification