ON NDS351AN

N-канальный30 V1,4A (Ta)3 В @ 250 мкА500 мВт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

General DescriptionThese N-Channel logic level enhancement mode power fieldeffect transistors are produced using Fairchilds proprietary,high cell density, DMOS technology. This very high densityprocess is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltageapplications in notebook computers, portable phones, PCMCIAcards, and other battery powered circuits where fastswitching, and low in-line power loss are needed in a verysmall outline surface mount package.

Features1.3 A, 20 V. Rds(ON) = 0.21 W @ Vgs= 2.7 VRds(ON) = 0.16 W @ Vgs= 4.5 V.Industry standard outline SOT-23 surface mount packageusing poprietary SuperSOTTM-3 design for superior thermaland electrical capabilities.High density cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC currentcapability.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
30 V Drain to Source Voltage (Vdss)
1.4A (Ta) Current - Continuous Drain (Id) @ 25°C
4.5V, 10V Drive Voltage (Max Rds On, Min Rds On)
160mOhm @ 1.4A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
1.8 nC @ 4.5 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
145 pF @ 15 V Input Capacitance (Ciss) (Max) @ Vds
500mW (Ta) Power Dissipation (Max)
Surface Mount Mounting Type