ON NDS8926

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)20V5.5A35 мОм @ 5,5 А, 4,5 В1 В @ 250 мкА

Overview

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

■ 5.5 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.045 Ω @ VGS = 2.7 V.■ High density cell design for extremely low RDS(ON).■ High power and current handling capability in a widely used surface mount package.■ Dual MOSFET in surface mount package.

Features

5.5A20VR=0.035@V=4.5V

RpsON=0.045Ω@Vs=2.7 V.

 High density cell design for extremely low RDejon

High power and current handling capability in a widely used

surface mount package.

Dual MOSFET in surface mount package.

Applications

low-voltage applications