ON NSV1C201MZ4T1G

NPN2 A100 V

Overview

The NSV1C200MZ4T1G is Bipolar Transistors - BJT PNP SOT223 BIP POWER TR, that includes NSS1C200 Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.006632 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOT-223-4, as well as the Single Configuration, the device can also be used as 2 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device has a - 100 V of Collector Emitter Voltage VCEO Max, and Transistor Polarity is PNP, and the Collector Emitter Saturation Voltage is - 0.22 V, and Collector Base Voltage VCBO is - 140 V, and the Emitter Base Voltage VEBO is - 7 V, and Maximum DC Collector Current is 3 A, and the Gain Bandwidth Product fT is 120 MHz, and DC Collector Base Gain hfe Min is 120 at - 500 mA at - 2 V, and the DC Current Gain hFE Max is 360 at - 500 mA at - 2 V.

The NSV1C200LT1G is Bipolar Transistors - BJT 100V PNP LOW VCE(SAT) T, that includes Reel Packaging, they are designed to operate with a NSS1C200L Series.

Features

Tape & Reel (TR) Package
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

Surface Mount Mounting Type

Applications

There are a lot of ON Semiconductor
NSV1C201MZ4T1G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting