ON NTGD3149CT1G

MOSFET (оксид металла)Затвор логического уровняN- и P-каналы20V3.2A, 2.4A60 мОм @ 3,5 А, 4,5 В1 В @ 250 мкА

Overview

The NTGD3148NT1G is MOSFET 2N-CH 20V 3A 6TSOP, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a SOT-23-6 Thin, TSOT-23-6 Package Case, it has an Operating Temperature range of -50°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 6-TSOP, as well as the 2 N-Channel (Dual) FET Type, the device can also be used as 900mW Power Max. In addition, the Drain to Source Voltage Vdss is 20V, the device is offered in 300pF @ 10V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 3A, and the Rds On Max Id Vgs is 70 mOhm @ 3.5A, 4.5V, and Vgs th Max Id is 1.5V @ 250μA, and the Gate Charge Qg Vgs is 3.8nC @ 4.5V.

The NTGD3147FT1G is MOSFET P-CH 20V 2.2A 6-TSOP manufactured by ON. The NTGD3147FT1G is available in SC-74, SOT-457 Package, is part of the FETs - Single, , and with support for MOSFET P-CH 20V 2.2A 6-TSOP, P-Channel 20V 2.2A (Ta) 1W (Ta) Surface Mount 6-TSOP.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
3.2A, 2.4A Current - Continuous Drain (Id) @ 25°C
60mOhm @ 3.5A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
5.5nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
387pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
900mW Power - Max
Surface Mount Mounting Type