ON NTHD4401PT1G

MOSFET (оксид металла)Затвор логического уровня2 P-канала (сдвоенные)20V2.1A155 мОм при 2,1 А, 4,5 В1,2 В @ 250 мкА

Overview

The NTHD4102PT1G is MOSFET 2P-CH 20V 2.9A CHIPFET, that includes NTHD4102P Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.002998 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SMD, Flat Lead, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a ChipFET? of Supplier Device Package, and Configuration is Dual Dual Drain, and the FET Type is 2 P-Channel (Dual), and Power Max is 1.1W, and the Transistor Type is 2 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 750pF @ 16V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 2.9A, and Rds On Max Id Vgs is 80 mOhm @ 2.9A, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 8.6nC @ 4.5V, and the Pd Power Dissipation is 600 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 12 ns, and the Rise Time is 12 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is - 4.1 A, and Vds Drain Source Breakdown Voltage is - 20 V, and the Rds On Drain Source Resistance is 120 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 32 ns, and Typical Turn On Delay Time is 5.5 ns, and the Forward Transconductance Min is 7 S, and Channel Mode is Enhancement.

The NTHD4401PT1 is MOSFET 2P-CH 20V 2.1A CHIPFET, that includes 2.1A Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 P-Channel (Dual), Gate Charge Qg Vgs is designed to work in 6nC @ 4.5V, as well as the 300pF @ 10V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in 8-SMD, Flat Lead Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 1.1W, and the Rds On Max Id Vgs is 155 mOhm @ 2.1A, 4.5V, and Supplier Device Package is ChipFET?, and the Vgs th Max Id is 1.2V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
2.1A Current - Continuous Drain (Id) @ 25°C
155mOhm @ 2.1A, 4.5V Rds On (Max) @ Id, Vgs
1.2V @ 250µA Vgs(th) (Max) @ Id
6nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
300pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
1.1W Power - Max
Surface Mount Mounting Type
ChipFET™ Supplier Device Package